| PART |
Description |
Maker |
| M36W416TG-ZAT M36W416BGZA M36W416BG70ZA1T M36W416B |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
|
ST Microelectronics
|
| LHF04C10 LH28F004SCB-L12 |
4Mbit Flash Memory
|
http://
Sharp Corporation
|
| M76DW52004TA M76DW52004TA70Z M76DW52004TA70ZT |
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
ST Microelectronics
|
| W28F641B |
64MBIT (4MBIT 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond Electronics Corp
|
| ES29BDS160DT-90RTGI ES29BDS160ET-90RTGI ES29BDS320 |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
| ES29F160FT-90RTG |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
Excel Semiconductor Inc.
|
| PM39LV010 PM39LV512-70JCE PM39LV010-70VC PM39LV010 |
(PM39LV010 - PM39LV512) 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
|
PMC-Sierra, Inc.
|
| M29W004T M29W004B |
4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb闪速存储器)
|
意法半导
|
| LH28F004SU LH28F400SU |
4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory Mb12Kbit × 856千位× 16V单电压闪
|
Sharp Corporation
Sharp, Corp.
|
| M29F400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory(4Mb闪速存储器) 4Mb12KB的x8256Kb的x16插槽，引导块）单电源闪存4Mb的闪速存储器
|
意法半导
STMicroelectronics N.V.
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
